3sk41 Datasheet 🎯 Certified

The 3SK41 is a classic N-channel dual-gate GaAs (Gallium Arsenide) field-effect transistor (FET) designed primarily for high-frequency applications. It is widely recognized for its exceptional performance in VHF and UHF mixers, amplifiers, and tuners. If you are designing, repairing, or restoring vintage or specialized radio frequency (RF) equipment, understanding the 3SK41 datasheet is crucial.

As OEM supplies have dried up, restorers have identified several suitable replacement options, though each comes with its own considerations.

| Parameter | Condition | Min | Typ | Max | Unit | | :--- | :--- | :--- | :--- | :--- | :--- | | | VDS=10V, VG1S=0, VG2S=0 | 5 | 15 | 25 | mA | | Gate-Source Cutoff Voltage | VDS=10V, ID=100µA | -0.5 | -1.5 | -3.0 | V | | Forward Transfer Admittance (|Yfs|) | VDS=10V, ID=10mA, f=1kHz | 12 | 20 | 30 | mS | | Input Capacitance (Ciss) | VDS=10V, f=1MHz | - | 3.5 | 5.0 | pF | | Reverse Transfer Capacitance (Crss) | VDS=10V, f=1MHz | - | 0.03 | 0.1 | pF | | Output Capacitance (Coss) | VDS=10V, f=1MHz | - | 2.0 | 3.0 | pF | | Noise Figure (NF) | f=200MHz, VG2S=4V | - | 3.0 | 5.0 | dB | | Power Gain (Gps) | f=200MHz, VG2S=4V | 18 | 22 | - | dB |

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Here is an essay exploring the significance of this humble component.

The 3SK41 is a depletion‑mode, N‑Channel dual‑gate MOSFET. Unlike a standard MOSFET, it features two electrically independent gate terminals (Gate1 and Gate2) that provide greater flexibility in circuit design, especially for gain control and mixer stages. The four leads (Source, Drain, Gate1, Gate2) are housed in a compact hermetically sealed , a standard for high‑reliability RF transistors of its era.

(Adjust resistor and choke values to meet the datasheet’s recommended bias point where gm is adequate and ID within limits.) The 3SK41 is a classic N-channel dual-gate GaAs

The 3SK41 utilizes a four-lead (often referred to in historical documentation as a CAN-4 metal case ). The robust metal enclosure provides inherent shielding against electromagnetic interference (EMI), which is critical for RF preamplifiers.

The 3SK41 is an primarily designed for VHF (Very High Frequency) amplification . All sources agree that it is a low-power, high-frequency device designed for the front-end stages of receivers. The consensus on its key absolute maximum ratings is as follows:

Understanding the is the first step to preserving a piece of electronics history. Whether you are troubleshooting a dead channel in a vintage receiver, searching for a reliable replacement, or designing a retro‑style RF project, the 3SK41 and its equivalents remain a fascinating and functional bridge between past innovation and modern repair. As OEM supplies have dried up, restorers have

What are you repairing? (e.g., a specific ham radio model, a TV tuner) Share public link

Tied to the source terminal and often grounded alongside the metal casing to minimize parasitic capacitance.

The 3SK41 is a silicon N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced primarily by Hitachi (now Renesas) and later by NEC. Unlike a standard JFET or single-gate MOSFET, the dual-gate architecture offers a unique advantage: it combines the low-noise characteristics of a JFET with the automatic gain control (AGC) capability of a bipolar transistor.

Optimally rated for operations extending up to 700 MHz 3SK41 Package and Pinout Architecture

Note: When replacing a through-hole TO-72 component like the 3SK41 with a modern surface-mount alternative like the BF998, a small breakout adapter board may be required to match the legacy PCB footprint.